Low-Temperature One-Pot Synthesis of Tin(II) Sulfide Nanocrystalline Thin Films
摘要
Photosensitive semiconducting p-type tin(II) sulfide thin films with a band gap of 1.03 ± 0.09 eV have been manufactured in compliance with green chemistry principles using the one-pot approach. To extend the range of sulfidizers suitable for chemical deposition of thin nanostructured SnS films, the efficiency of using sodium thiosulfate solutions has been shown. It has been found that thin SnS films with good adhesion to a dielectric substrate and a coherent scattering region size of ⁓30 nm can be synthesized through hydrolytic decomposition of thiosulfate ions. The conditions for synthesis of SnS have been justified by thermodynamic analysis of ionic equilibria. Quantum-chemical calculations have shown that the p-type conductivity of the synthesized SnS films is most likely due to tin vacancies.