Thermodynamic Modeling of the CVD Process in the Ni–Si–C–H System

Oxygen-free ceramics are promising for use in various technologies owing to their unique properties. Additions of metals or metal compounds significantly expand the application range of the ceramics. Therefore, methods for the synthesis of such composites are being actively developed. One way to manufacture such films is chemical vapor deposition (CVD). Thermodynamic modeling offers a means to choose the process parameters. In this work, thermodynamic modeling of the CVD process in the Ni–Si–C–H system, where nickelocene and silane were precursors, was carried out. The results can be useful for film materials design based on SiC and nickel-containing phases.