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Abstract <p>Artificial oxide lattices realize atomic and crystal structures that are not available in nature, thus providing controllable correlated quantum phenomena. In our case it is the La<sub>0.7</sub>Sr<sub>0.3</sub>MnO<sub>3</sub>/SrIrO<sub>3</sub> heterostructure that was epitaxially grown in situ by magnetron sputtering. The La<sub>0.7</sub>Sr<sub>0.3</sub>MnO<sub>3</sub> used as a ferromagnet, and SrIrO<sub>3</sub> as a 5<i>d</i> transition metal oxide with strong spin-orbital coupling. Their interface allows to observe an appearance of spin current induced by spin-pumping under the conditions of ferromagnetic resonance. However, through spin magnetoresistance measurements, it is convenient to evaluate an important parameter—spin-Hall angle. Measurements of spin Hall magnetoresistance were made in both the transverse and longitudinal configurations in an in-plane external magnetic field. For additional characterization of electron transport, the measurements of an ordinary Hall effect and magnetoresistance in a perpendicular magnetic field were performed.</p>

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Iridate Based Heterostructures with High Spin Hall Angle

  • 期刊论文

  • 发表日期：

    2025年12月1日

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  • G. D. Ulev,
  • K. Y. Constantinian,
  • G. A. Ovsyannikov,
  • I. E. Moscal,
  • A. V. Mashirov

摘要

Abstract

Artificial oxide lattices realize atomic and crystal structures that are not available in nature, thus providing controllable correlated quantum phenomena. In our case it is the La0.7Sr0.3MnO3/SrIrO3 heterostructure that was epitaxially grown in situ by magnetron sputtering. The La0.7Sr0.3MnO3 used as a ferromagnet, and SrIrO3 as a 5d transition metal oxide with strong spin-orbital coupling. Their interface allows to observe an appearance of spin current induced by spin-pumping under the conditions of ferromagnetic resonance. However, through spin magnetoresistance measurements, it is convenient to evaluate an important parameter—spin-Hall angle. Measurements of spin Hall magnetoresistance were made in both the transverse and longitudinal configurations in an in-plane external magnetic field. For additional characterization of electron transport, the measurements of an ordinary Hall effect and magnetoresistance in a perpendicular magnetic field were performed.