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Abstract <p>Magnetron sputtering was used to produce W<sub>0.75</sub>Ta<sub>0.25</sub> alloy films of various thicknesses ranging from 2 to 57 nm and spin valves of the WTa/CoFe/Cu/CoFe/Ru/CoFe/FeMn/Ta composition based on the W<sub>0.75</sub>Ta<sub>0.25</sub> buffer layer. Based on studies of the film microstructure, surface morphology, and measurements of their electrical resistance and magnetoresistance, it has been shown that the W<sub>0.75</sub>Ta<sub>0.25</sub> β-phase with a face-centered cubic structure is formed at the initial stage of growth, and α-W<sub>0.75</sub>Ta<sub>0.25</sub> appears and further prevails with increasing film thickness. Positive longitudinal magnetoresistance (Hanle magnetoresistance) was found in W<sub>0.75</sub>Ta<sub>0.25</sub> films, which decreases sharply with increasing film thickness and the appearance of the α‑W<sub>0.75</sub>Ta<sub>0.25</sub> phase. Spin valves based on β-W<sub>0.75</sub>Ta<sub>0.25</sub> alloy, which are of practical interest as a sensitive material for devices implementing control of magnetic state of nanostructures by using spin accumulation and spin–orbit torque, have been synthesized.</p>

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Spin–Orbit Torque Controlled Spin Valves Based on WTa Nanolayers

  • 期刊论文

  • 发表日期：

    2025年7月1日

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  • L. I. Naumova,
  • R. S. Zavornitsyn,
  • M. A. Milyaev,
  • A. A. Germizina,
  • I. K. Maksimova,
  • T. A. Chernyshova,
  • A. Yu. Pavlova,
  • V. V. Proglyado,
  • V. V. Ustinov

摘要

Abstract

Magnetron sputtering was used to produce W0.75Ta0.25 alloy films of various thicknesses ranging from 2 to 57 nm and spin valves of the WTa/CoFe/Cu/CoFe/Ru/CoFe/FeMn/Ta composition based on the W0.75Ta0.25 buffer layer. Based on studies of the film microstructure, surface morphology, and measurements of their electrical resistance and magnetoresistance, it has been shown that the W0.75Ta0.25 β-phase with a face-centered cubic structure is formed at the initial stage of growth, and α-W0.75Ta0.25 appears and further prevails with increasing film thickness. Positive longitudinal magnetoresistance (Hanle magnetoresistance) was found in W0.75Ta0.25 films, which decreases sharply with increasing film thickness and the appearance of the α‑W0.75Ta0.25 phase. Spin valves based on β-W0.75Ta0.25 alloy, which are of practical interest as a sensitive material for devices implementing control of magnetic state of nanostructures by using spin accumulation and spin–orbit torque, have been synthesized.