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Abstract <p>The electronic structure of two-dimensional (2D) hexagonal boron nitride doping with nickel atoms h-[B<sub>0.975</sub>Ni<sub>0.025</sub>]N is studied using the coherent potential approximation (CPA) and X-ray photoelectron spectroscopy (XPS). A metal electronic spectrum with Ni 3<i>d</i>-states inside the energy gap of pure h-BN is observed for disordered nitride h-[B<sub>0.975</sub>Ni<sub>0.025</sub>]N, which is in good accordance with the experimental XPS spectrum for Ni-ion implanted h-BN thin films.</p>

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Electronic Structure and XPS Spectra of Layered Ni-Doped h-BN

  • 期刊论文

  • 发表日期：

    2025年8月1日

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  • M. A. Korotin,
  • I. S. Zhidkov,
  • A. I. Kukharenko,
  • N. V. Gavrilov,
  • S. O. Cholakh,
  • E. Z. Kurmaev,
  • V. M. Zainullina

摘要

Abstract

The electronic structure of two-dimensional (2D) hexagonal boron nitride doping with nickel atoms h-[B0.975Ni0.025]N is studied using the coherent potential approximation (CPA) and X-ray photoelectron spectroscopy (XPS). A metal electronic spectrum with Ni 3d-states inside the energy gap of pure h-BN is observed for disordered nitride h-[B0.975Ni0.025]N, which is in good accordance with the experimental XPS spectrum for Ni-ion implanted h-BN thin films.