Abstract <p>The processes of recrystallization and aging occurring upon heating in the temperature range of 200–700°C have been studied in ternary Cu−Cr−Zr and binary Cu−Cr and Cu−Zr alloys subjected to high-strain-rate deformation using the method of dynamic channel-angular pressing. It has been found that in an alloy alloyed only with Cr, the recrystallization begins at a temperature by 200 K lower than in alloys alloyed with Zr, and occurs over a wide temperature range. The features of recrystallization in the studied alloys are explained by different mechanisms of precipitation of the Cu<sub>5</sub>Zr and Cr phases upon aging. Particles of the Cu<sub>5</sub>Zr phase are predominantly heterogeneously precipitated at dislocations and subgrain boundaries, preventing the formation of recrystallization centers. The Cr particles are homogeneously precipitated, inhibit the migration of high-angle boundaries, and hinder grain growth.</p>

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The Aging and Recrystallization in Cu−Cr, Cu−Zr, and Cu−Cr−Zr Alloys Subjected to Dynamic Channel-Angular Pressing

  • V. I. Zel’dovich,
  • I. V. Khomskaya,
  • D. N. Abdullina

摘要

Abstract

The processes of recrystallization and aging occurring upon heating in the temperature range of 200–700°C have been studied in ternary Cu−Cr−Zr and binary Cu−Cr and Cu−Zr alloys subjected to high-strain-rate deformation using the method of dynamic channel-angular pressing. It has been found that in an alloy alloyed only with Cr, the recrystallization begins at a temperature by 200 K lower than in alloys alloyed with Zr, and occurs over a wide temperature range. The features of recrystallization in the studied alloys are explained by different mechanisms of precipitation of the Cu5Zr and Cr phases upon aging. Particles of the Cu5Zr phase are predominantly heterogeneously precipitated at dislocations and subgrain boundaries, preventing the formation of recrystallization centers. The Cr particles are homogeneously precipitated, inhibit the migration of high-angle boundaries, and hinder grain growth.