Contact Potential Difference in the Absence of a Current through a Sample in the Quantum Hall Effect Regime in InGaAs/InAlAs Heterostructure
摘要
Abstract
The paper presents experimental results of the appearance of a voltage at the potential contacts in the absence of an external current through a sample in the plateau region of the quantum Hall effect in a heterostructure with an InGaAs/InAlAs quantum well. The occurrence of a voltage is associated with the nonequivalence of the edge current in the potential contact areas in a magnetic field in a system with a two-dimensional electron gas.