Creation of Submicrometer Magnetoresistive Tunnel Junction CoFeB/MgO/CoFeB Using an HSQ/PMMA Resistive Mask

The technology has been developed for manufacturing the magnetoresistive tunnel junction based on CoFeB/MgO/CoFeB layers with typical lateral sizes in the range from 200 to 700 nm by means of a set of HSQ/PMMA electronic resistive masks. To study the processes of magnetization reversal in the obtained samples, magnetoresistance curves are plotted. It is shown that elements with both vortex and quasi-uniform distributions of free layer magnetization are revealed, which depends on the structure of the magnetosensitive layer and the geometric parameters of the magnetoresistive tunnel junctions. Moreover, the width of the front of magnetization reversal in the elements with quasi-uniform distributions ranges from 2 to 6 Oe.