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Abstract <p>This study presents a novel and thermodynamically consistent framework designed to overcome key limitations of classical viscoelastic and thermoelastic theories, which fail to capture memory effects, size-dependent phenomena, and ultrafast thermal responses in micro- and nano-scale semiconductor devices. The proposed model uniquely integrates fractional calculus with nonlocal continuum mechanics by employing the Caputo–Fabrizio fractional derivative, characterized by a smooth, non-singular exponential kernel that avoids unphysical singularities while preserving realistic fading memory behavior. In addition, the model incorporates dual relaxation times to account for phase-lagged heat conduction and carrier diffusion, along with a nonlocal length-scale parameter that captures long-range atomic interactions. The framework is specifically applied to a rotating cylindrical semiconductor subjected to pulsed laser heating, a physically relevant scenario for high-speed optoelectronic and microelectromechanical systems operating under transient thermal and mechanical loads. The solution methodology combines analytical techniques based on Laplace transforms with robust numerical inversion to solve the fully coupled multiphysics problem involving thermal, mechanical, electronic, and electromagnetic fields. Key findings from parametric analyses reveal that the fractional order, nonlocal scale, angular velocity, laser pulse duration, and thermal/carrier phase lags all significantly influence the distributions of temperature, carrier density, displacement, and stress. Critically, the results demonstrate that ignoring nonlocal effects or relying on classical integer-order derivatives leads to substantial inaccuracies in predicting photothermal and thermomechanical responses. This model offers a more accurate, physically grounded, and reliable predictive tool for the design and performance assessment of next-generation semiconductor-based devices, such as high-speed rotating micro-gyroscopes, laser-driven actuators, photothermal nanosensors, and other microelectromechanical systems where precise control of coupled thermal, mechanical, and electronic behavior under ultrafast excitation is essential.</p>

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A Fractional Nonlocal Thermoviscoelastic Framework Incorporating Non-Singular Kernels and Length-Scale Effects: Analysis of Rotating Cylindrical Semiconductor under Pulse Heating

  • 期刊论文

  • 发表日期：

    2025年12月1日

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  • Ahmed E. Abouelregal,
  • Nouf A. Alrubea,
  • Marin Marin

摘要

Abstract

This study presents a novel and thermodynamically consistent framework designed to overcome key limitations of classical viscoelastic and thermoelastic theories, which fail to capture memory effects, size-dependent phenomena, and ultrafast thermal responses in micro- and nano-scale semiconductor devices. The proposed model uniquely integrates fractional calculus with nonlocal continuum mechanics by employing the Caputo–Fabrizio fractional derivative, characterized by a smooth, non-singular exponential kernel that avoids unphysical singularities while preserving realistic fading memory behavior. In addition, the model incorporates dual relaxation times to account for phase-lagged heat conduction and carrier diffusion, along with a nonlocal length-scale parameter that captures long-range atomic interactions. The framework is specifically applied to a rotating cylindrical semiconductor subjected to pulsed laser heating, a physically relevant scenario for high-speed optoelectronic and microelectromechanical systems operating under transient thermal and mechanical loads. The solution methodology combines analytical techniques based on Laplace transforms with robust numerical inversion to solve the fully coupled multiphysics problem involving thermal, mechanical, electronic, and electromagnetic fields. Key findings from parametric analyses reveal that the fractional order, nonlocal scale, angular velocity, laser pulse duration, and thermal/carrier phase lags all significantly influence the distributions of temperature, carrier density, displacement, and stress. Critically, the results demonstrate that ignoring nonlocal effects or relying on classical integer-order derivatives leads to substantial inaccuracies in predicting photothermal and thermomechanical responses. This model offers a more accurate, physically grounded, and reliable predictive tool for the design and performance assessment of next-generation semiconductor-based devices, such as high-speed rotating micro-gyroscopes, laser-driven actuators, photothermal nanosensors, and other microelectromechanical systems where precise control of coupled thermal, mechanical, and electronic behavior under ultrafast excitation is essential.