Varying Thermal Conductivities of Microelongated Excited Electron-Hole Optical Waves in Semiconductors Subjected to Ramp-Type Heating

In this work, a novel model is presented that might explain the occurrence of elastic-mechanical-thermodiffusion (EMTD) waves in microelongated semiconductors. When analyzing the optoelectronic impact of laser pulses on a semiconductor material, it is important to take into account the interaction between holes and electrons. As a function of the thermal effect, thermal conductivity may be chosen. The photothermal (PT) theory and the thermoelasticity (TE) theory are used to decompose the governing equations with the temperature gradient. The fundamental equations are explained in terms of a one-dimensional (1D) thermoelastic (TED) and electronic (ED) deformation. The Laplace transform is a mathematical tool for obtaining the main physical fields. Some boundary conditions are taken at the free surface, and they are crucial to the technique by which the issue is solved. The Riemann-sum approximation technique is used to invert the Laplace transform to find the field solutions in the closed space-time domain. The mechanical ramp type of boundary conditions is used. Some comparisons are done under the influence of laser pulses and changing thermal conductivity and variable thermal memory based on numerical data and graphical representations of silicon material.