A Novel Magneto-Photo-Elasto-Thermodiffusion Model of Electrons-Holes Microtemperature Semiconductor Stability Medium

This study uses a theoretical mathematical and physical model to investigate the interaction between electrons and holes in a semiconductor material. Our focus is on studying the elasto-thermodiffusion (ETD) theory, particularly in the context of photothermal transport processes that incorporate the influence of microtemperature. The examination of the governing equations considers the impact of the magnetic field. We study the one-dimensional deformation resulting from the interplay of electronic and thermoelastic phenomena, including hole mechanisms. For the primary physical parameters, we obtain dimensionless field values theoretically. To solve the system of equations, we use mathematical methods such as Laplace transforms and account for specific initial conditions. The initial conditions are defined at the boundary for the primary physical fields, which experience ramp heating in the Laplace domain. We then use Laplace inverse transforms and approximations to obtain closed-form solutions in the time domain for the main fields. Graphical comparisons are made to analyze the propagation of these fields under various parameters when the stability cases are studied. The study aims to determine whether or not one-dimensional stabilities predominate at a specific magnetic field, which is relevant for industrial or environmental applications. The paper goes into great detail about these findings.