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Abstract <p>We report an X-ray certification of a series of new X-ray standard (Si, Ge, LaB<sub>6</sub>, InSb) in the form of 20-50&#xa0;µm large perfect high-purity single crystals. The unit cell parameters of the studied single crystals are measured using a Si single crystal (<i>a</i>&#xa0;=&#xa0;5.431042&#xa0;Å) as an external reference that was earlier studied on a single-crystal spectrometer using Bond′s scheme. It is shown that the relative accuracy of the obtained cubic unit cell parameters Δ<i>a</i>/<i>a</i> is at least 5·10<sup>–5</sup> provided that eccentricity was taken into account properly. The cubic unit cell parameter of the Y<sub>2</sub>O<sub>3</sub> single crystal is refined using Ge and InSb standards. </p>

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X-Ray Certification of Si, Ge, LaB6, and InSb Single Crystals

  • 期刊论文

  • 发表日期：

    2025年7月1日

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  • P. S. Serebrennikova,
  • S. A. Gromilov

摘要

Abstract

We report an X-ray certification of a series of new X-ray standard (Si, Ge, LaB6, InSb) in the form of 20-50 µm large perfect high-purity single crystals. The unit cell parameters of the studied single crystals are measured using a Si single crystal (a = 5.431042 Å) as an external reference that was earlier studied on a single-crystal spectrometer using Bond′s scheme. It is shown that the relative accuracy of the obtained cubic unit cell parameters Δa/a is at least 5·10–5 provided that eccentricity was taken into account properly. The cubic unit cell parameter of the Y2O3 single crystal is refined using Ge and InSb standards.