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Crystal Growth and Luminescence Properties of TbGa3(BO3)4 Crystals

  • 期刊论文

  • 发表日期：

    2024年4月1日

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  • M. I. Rakhmanova,
  • K. A. Kokh,
  • N. G. Kononova,
  • A. B. Kuznetsov

摘要

Abstract

TbGa3(BO3)4 crystals were grown using the Bi2Mo3O12:B2O3:Tb2O3 flux, which decreases contamination of Bi in the resulting crystal. The produced compound crystallizes in the R32 space group with unit cell parameters: a = 9.4512(4) Å, c = 7.4532(2) Å. A strong green emission of the luminescence is primarily dominated by the 5D4 to 7F5 transition in Tb3+. Annealing these crystals in a hydrogen atmosphere at 800 °C causes a reduction in the luminescence efficiency. On the other hand, annealing in air results in the increment of QY up to the value of 38%.