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<p>The phase shift of an optical beam in free space due to the formation of a crystal structure in controlled elementary cells based on thin films of phase-change materials Ge<sub>2</sub>Sb<sub>2</sub>Se<sub>4</sub>Te, Sb<sub>2</sub>Se<sub>3</sub>, and Bi<sub>2</sub>Se<sub>3</sub> under the control effect of pulsed laser radiation has been experimentally studied. The change in the phase of the studied optical beam passing through a controlled cell of phase-changing material relative to the control beam in a Jamin interferometer has been demonstrated. The phase shift has been estimated using analytical expressions.</p>

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Active Elements of Optical Phase Shifters Based on Thin Ge2Sb2Se4Te, Sb2Se3, and Bi2Se3 Films

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2025年12月1日

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  • A. A. Burtsev,
  • V. V. Ionin,
  • A. V. Kiselev,
  • V. A. Mikhalevsky,
  • N. N. Eliseev,
  • A. A. Nevzorov,
  • E. V. Khaidukov,
  • A. A. Lotin

摘要

The phase shift of an optical beam in free space due to the formation of a crystal structure in controlled elementary cells based on thin films of phase-change materials Ge2Sb2Se4Te, Sb2Se3, and Bi2Se3 under the control effect of pulsed laser radiation has been experimentally studied. The change in the phase of the studied optical beam passing through a controlled cell of phase-changing material relative to the control beam in a Jamin interferometer has been demonstrated. The phase shift has been estimated using analytical expressions.