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<p>The modification of the bulk of synthetic optical-grade sapphire by focused (NA = 0.55) 150-fs laser pulses with a wavelength of 525 nm results in the formation of 2 × 2 × 25-µm<sup>3</sup> regions where luminescence in the 700–850 nm band, associated with the formation of multicomponent complexes involving F<sub>2</sub> and <InlineEquation ID="IEq1"> <EquationSource Format="TEX">\({\text{F}}_{2}^{{2 + }}\)</EquationSource> <!--JETPLet2560835Danilov-m1--> </InlineEquation> vacancies and Cr<sup>3+</sup> ions, is enhanced. For pulse energies of 5–22.5 nJ, the sapphire crystal lattice remains undamaged, which makes this process promising for writing three-dimensional microcodes for luminescent memory with capacities as high as 10 Gbit/cm<sup>3</sup> suitable for error-free readout under single-photon laser excitation.</p>

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Femtosecond-Laser Writing of Microbits for Luminescent Memory in Sapphire

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2025年10月1日

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  • P. A. Danilov,
  • A. V. Gorevoy,
  • I. D. Matyaev,
  • I. V. Gritsenko,
  • V. N. Kurlov,
  • S. I. Kudryashov

摘要

The modification of the bulk of synthetic optical-grade sapphire by focused (NA = 0.55) 150-fs laser pulses with a wavelength of 525 nm results in the formation of 2 × 2 × 25-µm3 regions where luminescence in the 700–850 nm band, associated with the formation of multicomponent complexes involving F2 and \({\text{F}}_{2}^{{2 + }}\) vacancies and Cr3+ ions, is enhanced. For pulse energies of 5–22.5 nJ, the sapphire crystal lattice remains undamaged, which makes this process promising for writing three-dimensional microcodes for luminescent memory with capacities as high as 10 Gbit/cm3 suitable for error-free readout under single-photon laser excitation.