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<p>An all-optical vector magnetometer based on paramagnetic color centers with the spin <i>S</i> = 3/2 in 4H-SiC silicon carbide is presented. The corresponding magnetometry method is based on level anticrossing spectroscopy and does not require the application of microwave power, unlike magnetometry based on optically detected magnetic resonance of nitrogen-vacancy centers in diamond. This eliminates sample heating and simplifies the design of the instrument. It has been shown that the use of “modifying” magnetic fields makes it possible to accelerate the measurement of external magnetic fields with high accuracy. Optical detection of level anticrossing signals in the infrared range provides micron and submicron spatial resolution, which makes the method promising for applications in microelectronics and biomedicine.</p>

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All-Optical Vector Magnetometry Based on Level Anticrossing Spectroscopy of Spin Centers in 4H-SiC

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2025年9月1日

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  • K. V. Likhachev,
  • M. V. Uchaev,
  • M. M. Loginova,
  • I. P. Veyshtort,
  • A. P. Bundakova,
  • M. V. Muzafarova,
  • A. S. Gurin,
  • R. A. Babunts,
  • P. G. Baranov

摘要

An all-optical vector magnetometer based on paramagnetic color centers with the spin S = 3/2 in 4H-SiC silicon carbide is presented. The corresponding magnetometry method is based on level anticrossing spectroscopy and does not require the application of microwave power, unlike magnetometry based on optically detected magnetic resonance of nitrogen-vacancy centers in diamond. This eliminates sample heating and simplifies the design of the instrument. It has been shown that the use of “modifying” magnetic fields makes it possible to accelerate the measurement of external magnetic fields with high accuracy. Optical detection of level anticrossing signals in the infrared range provides micron and submicron spatial resolution, which makes the method promising for applications in microelectronics and biomedicine.