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<p>A pulsed semiconductor disk laser emitting at a wavelength of 642.5 nm based on a GaInP/AlGaInP heterostructure with intracavity pumping into 25 quantum wells by 614.5-nm radiation from a dye laser has been studied for the first time. A pulsed power of ~80 W has been achieved at a pulse duration of ~0.5 μs. The power is limited by the destruction of the structure. The time modulation of radiation of the dye laser with a heterostructure inside the cavity with a period of ~6 ns equal to the cavity round-trip time has been detected.</p>

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Semiconductor Disk Laser Based on a GaInP/AlGaInP Heterostructure with Intracavity Pumping into Quantum Wells

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2025年8月1日

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  • A. A. Elsherbini,
  • V. I. Kozlovsky,
  • Ya. K. Skasyrsky,
  • M. P. Frolov

摘要

A pulsed semiconductor disk laser emitting at a wavelength of 642.5 nm based on a GaInP/AlGaInP heterostructure with intracavity pumping into 25 quantum wells by 614.5-nm radiation from a dye laser has been studied for the first time. A pulsed power of ~80 W has been achieved at a pulse duration of ~0.5 μs. The power is limited by the destruction of the structure. The time modulation of radiation of the dye laser with a heterostructure inside the cavity with a period of ~6 ns equal to the cavity round-trip time has been detected.