We experimentally investigate magnetoresistance of a single GeTe–Ni junction between the \(\alpha \) -GeTe topological semimetal and thick nickel film at room and liquid helium temperatures. For the magnetic field parallel to the junction plane, we demonstrate characteristic spin-valve hysteresis with mirrored differential resistance \(dV{\text{/}}dI\) peaks even at room temperature. In contrast, for normal magnetic fields spin-valve effect appears only at low temperatures. From the magnetic field anisotropy, observation of the similar effect for another topological semimetal Cd3As2, and strictly flat \(dV{\text{/}}dI(H)\) magnetoresistance curves for the reference GeTe–Au junction, we connect the observed spin-valve effect with the spin-dependent scattering between the spin textures in the topological surface states and the ferromagnetic nickel electrode. For the topological semimetal \(\alpha \) -GeTe, room-temperature spin-valve effect allows efficient spin-to-charge conversion even at ambient conditions.
