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<p>The conductivity of nominally undoped single-crystal diamond films grown epitaxially by chemical vapor deposition on a heavily boron-doped <i>p</i><sup>+</sup>-type diamond substrate has been studied. The conductivity of the films has been determined by the boron acceptor impurity. The temperature dependence of the conductivity in the temperature range of 300–500 K obeys the activation law, but the activation energy significantly exceeds the ionization energy of boron acceptors of ε<sub>i</sub> = 0.37 eV. It has been found that the acceptors are strongly compensated. This leads to the appearance of a random potential with a large amplitude of γ ≈ 0.2&#xa0;eV, leading to a large increase in the activation energy ∼ε<sub>i</sub> + γ. The reason for the appearance of the strong random potential has been attributed to the self-compensation of boron impurities by nitrogen atoms during the chemical vapor deposition growth of diamond films on the heavily doped substrate.</p>

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Features of the Conductivity of Nominally Undoped Single-Crystal CVD Diamond

  • 期刊论文

  • 发表日期：

    2025年2月1日

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  • M. S. Kagan,
  • S. K. Paprotskiy,
  • N. A. Khvalkovskiy,
  • I. V. Altukhov,
  • N. B. Rodionov,
  • A. P. Bol’shakov,
  • V. G. Ral’chenko,
  • R. A. Khmel’nitskiy

摘要

The conductivity of nominally undoped single-crystal diamond films grown epitaxially by chemical vapor deposition on a heavily boron-doped p+-type diamond substrate has been studied. The conductivity of the films has been determined by the boron acceptor impurity. The temperature dependence of the conductivity in the temperature range of 300–500 K obeys the activation law, but the activation energy significantly exceeds the ionization energy of boron acceptors of εi = 0.37 eV. It has been found that the acceptors are strongly compensated. This leads to the appearance of a random potential with a large amplitude of γ ≈ 0.2 eV, leading to a large increase in the activation energy ∼εi + γ. The reason for the appearance of the strong random potential has been attributed to the self-compensation of boron impurities by nitrogen atoms during the chemical vapor deposition growth of diamond films on the heavily doped substrate.