Efficient Loading of an Atom Chip from a Low-Velocity Atomic Beam

期刊论文
出版模式：

开放获取
发表日期：

2024年1月1日

查看全文

P. I. Skakunenko,
D. V. Bykova,
A. E. Afanasiev,
V. I. Balykin

摘要

Various regimes of the loading of a magneto-optical trap formed near an atom chip, such as loading from thermal atomic vapors and from a low-velocity atomic beam, have been studied on an example of ⁸⁷Rb atoms. The possibility of controlling the loading of the magneto-optical trap by spatially controlling the atomic beam has been demonstrated. This has made it possible to increase the loading rate of atoms into the magneto-optical trap with keeping ultrahigh vacuum near the atom chip. The maximum number of atoms in the magneto-optical trap at optimal loading regimes is 4.9 × 10⁷. In this case, the measured lifetime of atoms in the magneto-optical trap is 4.1 s.