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Abstract <p>The work reports on the structure of anodic tin oxide (ATO) films, synthesized in 0.5 M NaOH electrolyte at anodizing voltage of 4–12 V and temperature of 5 and 25°C. The microstructure and composition of the films were characterized with scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), Raman and infrared (IR) spectroscopy, and thermogravimetric analysis (TG). Pore diameter of ATO linearly increases with anodization voltage with a slope coefficient of 3.0 nm/V at either 5 or 25°C, providing average pore diameters in the range of 20–45 nm. Temperature does not affect significantly pores diameter, while determining anodization current and the growth rate. Film thickness is limited to ~150 µm due to dissolution of oxide layer at the oxide/electrolyte interface. ATO dissolution results in the diminishing of current efficiency from &gt;95% for the film thickness of ~60 µm (spent charge 44.2 C/cm<sup>2</sup>) to ~25% for the film thickness of ~120 µm (spent charge 176.8 C/cm<sup>2</sup>). The films are amorphous, composed of non-stoichiometric SnO<sub><i>x</i></sub>·<i>n</i>H<sub>2</sub>O with <i>x</i> = 1.5–1.9. It is suggested, that the porous structure forms due to preferential dissolution of Sn<sup>4+</sup> oxide, contacting with electrolyte, while Sn<sup>2+</sup> at the pores interstitials reveals much higher stability towards basic environment. Most homogeneous films with minimal number of cracking defects, are formed at 8 V, 5°C, and spent charge of &gt;176.8 C/cm<sup>2</sup>. The films reveal high conductivity as shown with impedance spectroscopy.</p>

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Microstructure and Composition of Anodic Tin Oxide Grown in NaOH Electrolyte

  • 期刊论文

  • 发表日期：

    2025年2月1日

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  • V. A. Stepanova,
  • M. V. Berekchiian,
  • I. V. Roslyakov,
  • A. A. Poyarkov,
  • T. B. Shatalova,
  • I. V. Kolesnik,
  • R. G. Valeev,
  • A. V. Lukashin,
  • A. A. Eliseev

摘要

Abstract

The work reports on the structure of anodic tin oxide (ATO) films, synthesized in 0.5 M NaOH electrolyte at anodizing voltage of 4–12 V and temperature of 5 and 25°C. The microstructure and composition of the films were characterized with scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), Raman and infrared (IR) spectroscopy, and thermogravimetric analysis (TG). Pore diameter of ATO linearly increases with anodization voltage with a slope coefficient of 3.0 nm/V at either 5 or 25°C, providing average pore diameters in the range of 20–45 nm. Temperature does not affect significantly pores diameter, while determining anodization current and the growth rate. Film thickness is limited to ~150 µm due to dissolution of oxide layer at the oxide/electrolyte interface. ATO dissolution results in the diminishing of current efficiency from >95% for the film thickness of ~60 µm (spent charge 44.2 C/cm2) to ~25% for the film thickness of ~120 µm (spent charge 176.8 C/cm2). The films are amorphous, composed of non-stoichiometric SnOx·nH2O with x = 1.5–1.9. It is suggested, that the porous structure forms due to preferential dissolution of Sn4+ oxide, contacting with electrolyte, while Sn2+ at the pores interstitials reveals much higher stability towards basic environment. Most homogeneous films with minimal number of cracking defects, are formed at 8 V, 5°C, and spent charge of >176.8 C/cm2. The films reveal high conductivity as shown with impedance spectroscopy.