Abstract—
The crystal–melt phase transition of a synthesized polycrystalline Ge2Sb2Te5 material (sp. gr. P \(\bar {3}\) m1) has been studied using differential scanning calorimetry, thermogravimetry, and temperature-dependent electrical resistance measurements in the range from room temperature to 750°C. Characteristic temperatures of the melting process and the enthalpy of fusion of this material have been determined, and its melting has been classified as a semiconductor–semiconductor phase transition. The conclusion has been made that the predominantly covalent component of interatomic interaction in the crystalline material remains unchanged upon melting.
