Effect of Doping with Praseodymium on the Crystal Structure and Optical Absorption Edge of the TlGaS₂ Compound

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发表日期：

2024年11月1日

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P. G. Ismailova,
N. Z. Gasanov,
A. A. Gajieva,
K. M. Guseinova

摘要

Abstract—

We have grown single crystals of solid solutions based on the layered compound semiconductor TlGaS₂ containing up to 2 mol % praseodymium and characterized them by X-ray diffraction. The optical absorption edge of the TlGaS₂〈Pr〉 solid solutions has been studied in the temperature range 100–200 K, and the edge exciton peak position has been determined as a function of temperature for all of the TlGaS₂〈Pr〉 compositions studied.

Effect of Doping with Praseodymium on the Crystal Structure and Optical Absorption Edge of the TlGaS2 Compound

摘要

Effect of Doping with Praseodymium on the Crystal Structure and Optical Absorption Edge of the TlGaS₂ Compound