Growth of TiSiN Films by Room-Temperature Reactive Magnetron Sputtering

TiSiN films have been grown by room-temperature reactive magnetron sputtering using a TiSi (10%) cathode of mixed composition. X-ray diffraction, elemental analysis, and X-ray photoelectron spectroscopy data indicated the formation of an amorphous phase containing nanocrystalline TiN inclusions having preferential orientation along the (200) plane, without silicon nitride inclusions. The obtained samples possessed hardness up to 31 GPa. Vacuum annealing at 500°C for 1 h led to an increase in the degree of crystallinity of the films, without changes in preferential orientation. X-ray diffraction characterization of the films annealed in air at temperatures of 500 and 700°C showed that they were oxidation-resistant at moderate temperatures.