Dynamics of Free Carrier Generation in Silicon with Different Types of Doping Induced by Terahertz Pulses

The article presents the results of experimental studies of free carrier generation n- and p-type in doped silicon under the effect of the leading edge of a THz pulse of picosecond duration with an electric field amplitude of up to 20 MV/cm. It has been experimentally shown that the transmittance of a test femtosecond laser pulse with an increase in field strength from 10 to 20 MV/cm during the first period of the THz pulse is the same for silicon samples with different types of doping. Numerical simulation of the dynamics of filling the conduction band with carriers in n- and p-type silicon. It is shown that as the field strength increases to ~10 MV/cm, when the concentration of electron–hole pairs becomes comparable with the concentration of impurity electrons (holes), the electron (n-type) or hole (p-type) impact ionization, which should be taken into account in calculations.