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Abstract <p>The effect of cadmium telluride electrochemical synthesis conditions (aluminum substrate anodization type, deposition potential, synthesis temperature) on the photosensitivity of the CdTe/Al<sub>2</sub>O<sub>3</sub>/Al nanocomposite system has been studied. It has been shown that anodization of aluminum films according to a two-stage procedure leads to the formation of pores with a diameter of 50–150 nm with an uneven distribution of pores over the surface, whereas a more uniform porous structure with a pore diameter of 20–50 nm is formed using a single-stage anodization method. A combination of XRD and Raman spectroscopy techniques has established that electrochemical deposition in the potential range from −450 to −650 mV and temperatures from 50 to 70°C for 1 h allows obtaining nanostructured cadmium telluride with excess tellurium content in the sample. The photoelectrochemical cell method has shown that CdTe/Al<sub>2</sub>O<sub>3</sub>/Al systems obtained at different potentials exhibit photosensitivity and have <i>n</i>-type conductivity. It has been established that the best photoresponse is shown by the system in which CdTe deposition was carried out at <i>E</i> = −520 mV and a temperature of 70°C.</p>

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Effect of Conditions of Electrochemical Synthesis of Cadmium Telluride on Photoconductivity and Resistivity of the CdTe/Al2O3/Al Nanocomposite System—New Materials for Photovoltaics

  • 期刊论文

  • 发表日期：

    2025年11月19日

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  • V. V. Rakitin,
  • U. R. Baklanova,
  • M. V. Gapanovich,
  • E. V. Rabenok,
  • I. D. Kulemetyev,
  • D. M. Sedlovets

摘要

Abstract

The effect of cadmium telluride electrochemical synthesis conditions (aluminum substrate anodization type, deposition potential, synthesis temperature) on the photosensitivity of the CdTe/Al2O3/Al nanocomposite system has been studied. It has been shown that anodization of aluminum films according to a two-stage procedure leads to the formation of pores with a diameter of 50–150 nm with an uneven distribution of pores over the surface, whereas a more uniform porous structure with a pore diameter of 20–50 nm is formed using a single-stage anodization method. A combination of XRD and Raman spectroscopy techniques has established that electrochemical deposition in the potential range from −450 to −650 mV and temperatures from 50 to 70°C for 1 h allows obtaining nanostructured cadmium telluride with excess tellurium content in the sample. The photoelectrochemical cell method has shown that CdTe/Al2O3/Al systems obtained at different potentials exhibit photosensitivity and have n-type conductivity. It has been established that the best photoresponse is shown by the system in which CdTe deposition was carried out at E = −520 mV and a temperature of 70°C.