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Abstract <p>In this work, plasma-enhanced chemical vapor deposition (PECVD) method was used for the first time to obtain thin InGaZnO (IGZO) films with varying stoichiometry, morphology, and phase composition. The films were synthesized using the setup described in detail in our papers [1–5]. The starting substances were elemental high-purity In, Ga and Zn, the carrier gases were Ar and H<sub>2</sub>, and a mixture of (Ar–H<sub>2</sub>–O<sub>2</sub>) was used as a plasma-forming gas. The plasma chemical synthesis process was studied using optical emission diagnostics. The mechanisms of the plasma chemical process were proposed. The chemical composition of the samples was determined by energy dispersive X-ray microanalysis. The obtained samples were also studied by scanning electron microscopy (SEM), atomic force microscopy (AFM) and optical profile measurements. The electrical properties of the obtained films (carrier type, mobility and concentration) were determined by Hall effect measurements.</p>

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Plasma Chemical Synthesis and Morphological Study of IGZO Thin Films

  • 期刊论文

  • 发表日期：

    2025年8月6日

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  • L. A. Mochalov,
  • S. V. Telegin,
  • E. A. Slapovskaya,
  • A. V. Knyazev

摘要

Abstract

In this work, plasma-enhanced chemical vapor deposition (PECVD) method was used for the first time to obtain thin InGaZnO (IGZO) films with varying stoichiometry, morphology, and phase composition. The films were synthesized using the setup described in detail in our papers [1–5]. The starting substances were elemental high-purity In, Ga and Zn, the carrier gases were Ar and H2, and a mixture of (Ar–H2–O2) was used as a plasma-forming gas. The plasma chemical synthesis process was studied using optical emission diagnostics. The mechanisms of the plasma chemical process were proposed. The chemical composition of the samples was determined by energy dispersive X-ray microanalysis. The obtained samples were also studied by scanning electron microscopy (SEM), atomic force microscopy (AFM) and optical profile measurements. The electrical properties of the obtained films (carrier type, mobility and concentration) were determined by Hall effect measurements.