Amorphous SiC_x:H and SiC_xN_y:H Films Obtained from Hexamethyldisilane Vapor in Inductively Coupled RF Discharge Plasma

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发表日期：

2024年11月1日

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M. N. Chagin,
E. N. Ermakova,
V. R. Shayapov,
V. S. Sulyaeva,
E. A. Maksimovskii,
I. V. Yushina,
M. L. Kosinova

摘要

Abstract

Amorphous films of hydrogenated silicon carbide SiC_x:H and carbonitride SiC_xN_y:H have been synthesized in an RF inductively coupled plasma reactor using hexamethyldisilane vapor and additional argon and/or nitrogen gases. The deposition process was carried out at temperatures of 50–400°C and plasma powers of 100–400 W. The dependences of the growth rate, chemical composition and structure of films, light transmittance, refractive index, and optical band gap on synthesis conditions have been obtained. An in situ study of the gas phase composition was performed using optical emission spectroscopy.

Amorphous SiCx:H and SiCxNy:H Films Obtained from Hexamethyldisilane Vapor in Inductively Coupled RF Discharge Plasma

摘要

Amorphous SiC_x:H and SiC_xN_y:H Films Obtained from Hexamethyldisilane Vapor in Inductively Coupled RF Discharge Plasma