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<p>Utilizing the Ferroelectric FET (FeFET) technology as a capacitive element in charge-based in-memory computing (IMC) arrays offers multiple advantages over the classical current-based computing, such as reduced read disturbances and negligible static power. However, traditional variation sources and reliability concerns tied to FeFET devices that challenge their applicability remain a question for non-volatile capacitor (nvCap) mode FeFET arrays. Crucially, we present a comprehensive device-to-system level comparison, demonstrating the reliability and accuracy of FeFET charge-based computing over the conventional current-based approach in the presence of variability. Device-level reliability analyses conducted experimentally using measurements from FeFET devices fabricated in a 28 nm technology platform, and additionally through TCAD simulations, reveal superior resilience against variability for the nvCap with a 0.66% <i>σ</i>/<i>μ</i> ratio for the on-state capacitance. At the circuit level, a novel 8-bit ADC array with ~90.0% accuracy was realized thanks to the reduced variability by operating the FeFET in nvCap mode. Injecting the error into our charge-based HDC model for language classification results in an average inference accuracy loss of &lt;0.2 percentage points, while the current-based version loses as much as 5.7 percentage points.</p>

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Charge-based in-memory computing using fabricated FeFET: device-system interaction

  • 期刊论文

  • 出版模式：

    开放获取

  • 发表日期：

    2026年7月21日

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  • Mahdi Benkhelifa,
  • Shubham Kumar,
  • Ashik Chalakariyil,
  • Zijian Zhao,
  • Simon Thomann,
  • Albi Mema,
  • Halid Mulaosmanovic,
  • Stefan Dünkel,
  • Sven Beyer,
  • Kai Ni,
  • Hussam Amrouch

摘要

Utilizing the Ferroelectric FET (FeFET) technology as a capacitive element in charge-based in-memory computing (IMC) arrays offers multiple advantages over the classical current-based computing, such as reduced read disturbances and negligible static power. However, traditional variation sources and reliability concerns tied to FeFET devices that challenge their applicability remain a question for non-volatile capacitor (nvCap) mode FeFET arrays. Crucially, we present a comprehensive device-to-system level comparison, demonstrating the reliability and accuracy of FeFET charge-based computing over the conventional current-based approach in the presence of variability. Device-level reliability analyses conducted experimentally using measurements from FeFET devices fabricated in a 28 nm technology platform, and additionally through TCAD simulations, reveal superior resilience against variability for the nvCap with a 0.66% σ/μ ratio for the on-state capacitance. At the circuit level, a novel 8-bit ADC array with ~90.0% accuracy was realized thanks to the reduced variability by operating the FeFET in nvCap mode. Injecting the error into our charge-based HDC model for language classification results in an average inference accuracy loss of <0.2 percentage points, while the current-based version loses as much as 5.7 percentage points.