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<p>Spin-transfer torque magnetic random-access memory (STT-MRAM) relies on nanoscale magnetic tunnel junctions (MTJs) as its fundamental building blocks. Next-generation STT-MRAM requires strategies that simultaneously improve switching energy efficiency and device endurance. Here, we present the first study of perpendicular STT-MRAM writing assisted by radio-frequency (RF) spin torque. We show that applying a small-amplitude RF pulse prior to a direct-current (DC) write pulse enhances the MTJ switching probability, with the efficiency gain increasing at lower RF frequencies. This RF+DC writing scheme enables shorter DC pulses, thereby improving device endurance. Analytical and numerical modeling qualitatively reproduces the experimental trends, while quantitative discrepancies indicate that realistic MTJ properties beyond idealized models play an important role in RF-assisted switching.</p>

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Radio-frequency assisted switching in perpendicular magnetic tunnel junctions

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2026年5月4日

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  • Mark Hayward,
  • Salvatore Perna,
  • Massimiliano d’Aquino,
  • Claudio Serpico,
  • Wonjoon Jung,
  • Chunhui Dai,
  • Patrick M. Braganca,
  • Ilya N. Krivorotov

摘要

Spin-transfer torque magnetic random-access memory (STT-MRAM) relies on nanoscale magnetic tunnel junctions (MTJs) as its fundamental building blocks. Next-generation STT-MRAM requires strategies that simultaneously improve switching energy efficiency and device endurance. Here, we present the first study of perpendicular STT-MRAM writing assisted by radio-frequency (RF) spin torque. We show that applying a small-amplitude RF pulse prior to a direct-current (DC) write pulse enhances the MTJ switching probability, with the efficiency gain increasing at lower RF frequencies. This RF+DC writing scheme enables shorter DC pulses, thereby improving device endurance. Analytical and numerical modeling qualitatively reproduces the experimental trends, while quantitative discrepancies indicate that realistic MTJ properties beyond idealized models play an important role in RF-assisted switching.