Scholarlink

<p>Spin-orbit torques (SOTs) offer a promising approach for fast, low-power magnetization manipulation in information technologies. Two-dimensional electron gases (2DEGs) formed at oxide interfaces are known to exhibit high SOT efficiency, attracting significant interest for their potential in the development of efficient SOT devices. Here, contrary to this common expectation, we reveal that the high SOT efficiency observed in SrTiO<sub>3</sub>-based devices—a representative oxide system—is largely superficial. Through spin-torque ferromagnetic resonance (ST-FMR) measurements, we find that the SOT efficiency in the SrTiO<sub>3</sub>-based devices is almost independent of the 2DEG formation and instead scales with the thickness and saturation magnetization of the ferromagnetic layer. This observation demonstrates that the SOT efficiency is primarily governed by current-induced Oersted fields rather than SOTs. These results prompt a revisit of previous experimental findings for a deeper understanding of SOTs in oxide 2DEGs, which is essential for advancing the design of highly efficient spintronic devices.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Spin-torque ferromagnetic resonance in SrTiO3-based systems: impact of out-of-phase Oersted field torque

  • 期刊论文

  • 出版模式：

    开放获取

  • 发表日期：

    2025年10月1日

查看全文
  • Nozomi Soya,
  • Sakura Yoshikawa,
  • Takayoshi Katase,
  • Kazuya Ando

摘要

Spin-orbit torques (SOTs) offer a promising approach for fast, low-power magnetization manipulation in information technologies. Two-dimensional electron gases (2DEGs) formed at oxide interfaces are known to exhibit high SOT efficiency, attracting significant interest for their potential in the development of efficient SOT devices. Here, contrary to this common expectation, we reveal that the high SOT efficiency observed in SrTiO3-based devices—a representative oxide system—is largely superficial. Through spin-torque ferromagnetic resonance (ST-FMR) measurements, we find that the SOT efficiency in the SrTiO3-based devices is almost independent of the 2DEG formation and instead scales with the thickness and saturation magnetization of the ferromagnetic layer. This observation demonstrates that the SOT efficiency is primarily governed by current-induced Oersted fields rather than SOTs. These results prompt a revisit of previous experimental findings for a deeper understanding of SOTs in oxide 2DEGs, which is essential for advancing the design of highly efficient spintronic devices.