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<p>As semiconductor-based electronic technologies continue downscaling, there is an urgent need to overcome the limitations of interconnect architectures and materials that are driving an unsustainable increase in energy consumption and jeopardizing performance. In this Review, we investigate the primary causes of prolonged signal delays in interconnect systems, providing an overview of the development of key interconnect components: metals, diffusion barriers and intermetal dielectrics. We define the essential requirements and technological hurdles for next-generation materials to be industrialized within damascene processes, including topological semi-metals such as molybdenum phosphide (MoP) and 2D materials such as graphene and amorphous boron nitride (a-BN). Integrating new materials into advanced device systems offers opportunities for the advancement of interconnect technologies and highly integrated semiconductor devices.</p>

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Future interconnect materials for highly integrated semiconductor devices

  • 期刊论文

  • 发表日期：

    2025年11月24日

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  • Hyeongjoon Kim,
  • Sehun Oh,
  • Sihyeon An,
  • Jaewon Kim,
  • Taehoon Kim,
  • Seohyun Jeong,
  • Onurcan Kaya,
  • Thomas Galvani,
  • Stephan Roche,
  • Judy J. Cha,
  • Manish Chhowalla,
  • Hyeon Suk Shin,
  • Hyeon-Jin Shin

摘要

As semiconductor-based electronic technologies continue downscaling, there is an urgent need to overcome the limitations of interconnect architectures and materials that are driving an unsustainable increase in energy consumption and jeopardizing performance. In this Review, we investigate the primary causes of prolonged signal delays in interconnect systems, providing an overview of the development of key interconnect components: metals, diffusion barriers and intermetal dielectrics. We define the essential requirements and technological hurdles for next-generation materials to be industrialized within damascene processes, including topological semi-metals such as molybdenum phosphide (MoP) and 2D materials such as graphene and amorphous boron nitride (a-BN). Integrating new materials into advanced device systems offers opportunities for the advancement of interconnect technologies and highly integrated semiconductor devices.