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<p>The continuous downscaling of silicon transistors has driven exponential improvements in computing performance and energy efficiency, but sub-10 nm channel lengths pose fundamental challenges in speed and power consumption. Emerging materials and architectures offer promising pathways for further miniaturization. Bismuth oxyselenide (Bi<sub>2</sub>O<sub>2</sub>Se), an air-stable 2D semiconductor, exhibits high mobility, a suitable bandgap and a native high-<i>κ</i> oxide (Bi<sub>2</sub>SeO<sub>5</sub>), resembling silicon and its SiO<sub>2</sub> counterpart. These properties suggest compatibility with industrial processes, positioning Bi<sub>2</sub>O<sub>2</sub>Se for next-generation high-performance computing. This Review summarizes recent advances in material synthesis, wafer-scale integration and device architectures, highlighting key challenges in the lab-to-fab transition. Finally, a roadmap is proposed to guide future innovations in ultra-scaled, energy-efficient electronics.</p>

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2D bismuth oxyselenide semiconductor for future electronics

  • 期刊论文

  • 发表日期：

    2025年5月28日

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  • Congwei Tan,
  • Junchuan Tang,
  • Xin Gao,
  • Chengyuan Xue,
  • Hailin Peng

摘要

The continuous downscaling of silicon transistors has driven exponential improvements in computing performance and energy efficiency, but sub-10 nm channel lengths pose fundamental challenges in speed and power consumption. Emerging materials and architectures offer promising pathways for further miniaturization. Bismuth oxyselenide (Bi2O2Se), an air-stable 2D semiconductor, exhibits high mobility, a suitable bandgap and a native high-κ oxide (Bi2SeO5), resembling silicon and its SiO2 counterpart. These properties suggest compatibility with industrial processes, positioning Bi2O2Se for next-generation high-performance computing. This Review summarizes recent advances in material synthesis, wafer-scale integration and device architectures, highlighting key challenges in the lab-to-fab transition. Finally, a roadmap is proposed to guide future innovations in ultra-scaled, energy-efficient electronics.