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<p>GaN p-channel field-effect transistors (p-FETs) are critical for enabling complementary integration of power and logic, while offering high breakdown capability. However, achieving high on-current in GaN p-FETs remains a significant challenge, primarily due to the low hole concentration, poor mobility, and challenges in forming stable, low-resistance ohmic contacts. Here, we present a novel GaN p-FET architecture that exhibits unconventional electron conduction, which helps enhance both thermal response and current modulation. We conduct a comprehensive investigation of heavily Mg-doped p<sup>++</sup>-GaN layers, focusing on contact optimization for high-temperature operation. Structural and interfacial characterization confirms high crystal quality and a thermally robust Ni/Au contact stack stabilized by an interfacial Ni<sub>x</sub>O<sub>y</sub> layer. This strategic interfacial layer, combined with moderate-temperature annealing, promotes Mg activation and suppresses oxygen-related traps, resulting in a ~ 73% reduction in contact resistance. Temperature-dependent analysis further reveals non-monotonic Schottky barrier modulation driven by interface evolution. Integrated into the device, this contact strategy enables thermally enhanced operation, with a drastically increase in on-state current and threshold voltage shifting positively by ~ 69% with temperature. These findings highlight a model shift in GaN p-FET design, where interface study and transport-mode innovation enable high-performance, thermally resilient devices for next-generation power integration.</p>

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A robust GaN p-FET with unconventional electron conduction

  • 期刊论文

  • 出版模式：

    开放获取

  • 发表日期：

    2026年7月3日

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  • Mohit Kumar,
  • Laurent Xu,
  • Timothée labau,
  • Jérôme Biscarrat,
  • Simona Torrengo,
  • Christophe Lecouvey,
  • Matthew Charles,
  • Caroline Elias,
  • Aurélien Olivier,
  • Estelle Chanel Petitjean,
  • Zineb Saghi,
  • Joelle Zgheib,
  • René Escoffier,
  • Julien Buckley

摘要

GaN p-channel field-effect transistors (p-FETs) are critical for enabling complementary integration of power and logic, while offering high breakdown capability. However, achieving high on-current in GaN p-FETs remains a significant challenge, primarily due to the low hole concentration, poor mobility, and challenges in forming stable, low-resistance ohmic contacts. Here, we present a novel GaN p-FET architecture that exhibits unconventional electron conduction, which helps enhance both thermal response and current modulation. We conduct a comprehensive investigation of heavily Mg-doped p++-GaN layers, focusing on contact optimization for high-temperature operation. Structural and interfacial characterization confirms high crystal quality and a thermally robust Ni/Au contact stack stabilized by an interfacial NixOy layer. This strategic interfacial layer, combined with moderate-temperature annealing, promotes Mg activation and suppresses oxygen-related traps, resulting in a ~ 73% reduction in contact resistance. Temperature-dependent analysis further reveals non-monotonic Schottky barrier modulation driven by interface evolution. Integrated into the device, this contact strategy enables thermally enhanced operation, with a drastically increase in on-state current and threshold voltage shifting positively by ~ 69% with temperature. These findings highlight a model shift in GaN p-FET design, where interface study and transport-mode innovation enable high-performance, thermally resilient devices for next-generation power integration.