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<p>Electrical isolation is critical to ensure safety and minimize electromagnetic interference (EMI), yet existing methods struggle to simultaneously transmit power and signals through a unified channel. Here we demonstrate a mechanically-isolated gate driver based on microwave-frequency surface acoustic wave (SAW) device on lithium niobate that achieves galvanic isolation of 2.75 kV with ultralow isolation capacitance (0.032 pF) over 1.25 mm mechanical propagation length, delivering 13.4 V open-circuit voltage and 44.4 mA short-circuit current. We demonstrate isolated gate driving for a gallium nitride (GaN) high-electron-mobility transistor, achieving a turn-on time of 108.8 ns and validate its operation in a buck converter. In addition, our SAW device operates over an ultrawide temperature range from 0.5 K (-272.6 °C) to 544 K (271 °C). The microwave-frequency SAW devices offer inherent EMI immunity and potential for heterogeneous integration on multiple semiconductor platforms, enabling compact, high-performance isolated power and signal transmission in advanced power electronics.</p>

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Microwave-acoustic-based isolated gate driver for power electronics

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2026年5月5日

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  • Liyang Jin,
  • Zichen Xi,
  • Joseph G. Thomas,
  • Jun Ji,
  • Yuanzhi Zhang,
  • Nuo Chen,
  • Yizheng Zhu,
  • Linbo Shao,
  • Liyan Zhu

摘要

Electrical isolation is critical to ensure safety and minimize electromagnetic interference (EMI), yet existing methods struggle to simultaneously transmit power and signals through a unified channel. Here we demonstrate a mechanically-isolated gate driver based on microwave-frequency surface acoustic wave (SAW) device on lithium niobate that achieves galvanic isolation of 2.75 kV with ultralow isolation capacitance (0.032 pF) over 1.25 mm mechanical propagation length, delivering 13.4 V open-circuit voltage and 44.4 mA short-circuit current. We demonstrate isolated gate driving for a gallium nitride (GaN) high-electron-mobility transistor, achieving a turn-on time of 108.8 ns and validate its operation in a buck converter. In addition, our SAW device operates over an ultrawide temperature range from 0.5 K (-272.6 °C) to 544 K (271 °C). The microwave-frequency SAW devices offer inherent EMI immunity and potential for heterogeneous integration on multiple semiconductor platforms, enabling compact, high-performance isolated power and signal transmission in advanced power electronics.