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<p>The need for high resolution microLED arrays, for applications in chip-level optical interconnects and augmented/virtual reality displays, requires the continuing miniaturization of the LED to reduce the pixel size and enable high pixel density. Miniaturization typically degrades brightness because of surface-related non-radiative recombination. Here we demonstrate a combined dry/wet etching process with polymeric encapsulation to construct InGaN-based microLEDs that show negligible degradation due to sidewall effects for devices having diameters as small as 6 µm. The microLEDs exhibit low surface recombination velocities ( &lt;10 cm s<sup>−1</sup>) and high wall plug efficiencies of 20.3% at a current density of <InlineEquation ID="IEq1"><EquationSource Format="TEX">\(2.5{\rm{A\; c}}{{\rm{m}}}^{-2}\)</EquationSource><EquationSource Format="MATHML"><math><mn>2.5</mn><mi mathvariant="normal">A c</mi><msup><mrow><mi mathvariant="normal">m</mi></mrow><mrow><mo>−</mo><mn>2</mn></mrow></msup></math></EquationSource></InlineEquation>. A simple numerical model is developed to explain the dependence of the microLED performance as a function of the microLED geometry. The model determines the critical microLED diameter at which surface recombination becomes comparable to bulk recombination, marking the onset of surface-limited behaviour.</p>

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Minimizing interface defects and enhancing optical brightness of µLEDs through polymeric encapsulants

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2026年4月21日

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  • Pranav P. Gavirneni,
  • William S. Wong

摘要

The need for high resolution microLED arrays, for applications in chip-level optical interconnects and augmented/virtual reality displays, requires the continuing miniaturization of the LED to reduce the pixel size and enable high pixel density. Miniaturization typically degrades brightness because of surface-related non-radiative recombination. Here we demonstrate a combined dry/wet etching process with polymeric encapsulation to construct InGaN-based microLEDs that show negligible degradation due to sidewall effects for devices having diameters as small as 6 µm. The microLEDs exhibit low surface recombination velocities ( <10 cm s−1) and high wall plug efficiencies of 20.3% at a current density of \(2.5{\rm{A\; c}}{{\rm{m}}}^{-2}\)2.5A cm−2. A simple numerical model is developed to explain the dependence of the microLED performance as a function of the microLED geometry. The model determines the critical microLED diameter at which surface recombination becomes comparable to bulk recombination, marking the onset of surface-limited behaviour.