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<p>The exponential growth of data-intensive artificial intelligence necessitates ultra-fast and energy efficient transceivers in data centres. Quantum-confined Stark effect (QCSE) modulators offer promising solutions, combining high-speed modulation with minimal footprint and superior energy efficiency. Here, we demonstrate a monolithically integrated O-band Ge/SiGe QCSE modulator operating at 100 Gb s<sup>−1</sup>, seamlessly integrated with silicon nitride (SiN) waveguides on both silicon and silicon-on-insulator substrates. Our modulator achieves &lt;1 dB coupling loss, &#xa0;&lt;63 fJ bit<sup>−1</sup> energy consumption, and &#xa0;&gt;5 dB static extinction ratio, while maintaining performance across a 20–80 °C temperature range. Leveraging CMOS-compatible fabrication processes, we incorporate multiple quantum-well stacks grown at wafer scale on silicon, enabling large-scale production. The modulator’s substrate-agnostic integration with back-end of line grown SiN layers, presents a scalable approach for cost-effective co-integration of electronic and photonic components. This work advances high-speed, energy-efficient optical modulators and paves the way for next-generation photonic integrated circuits in data centre interconnects.</p>

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A 100 Gb s−1 quantum-confined Stark effect modulator monolithically integrated with silicon nitride on Si

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2025年5月1日

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  • Ilias Skandalos,
  • Thalía Domínguez Bucio,
  • Lorenzo Mastronardi,
  • Guomin Yu,
  • Aaron Zilkie,
  • Frederic Y. Gardes

摘要

The exponential growth of data-intensive artificial intelligence necessitates ultra-fast and energy efficient transceivers in data centres. Quantum-confined Stark effect (QCSE) modulators offer promising solutions, combining high-speed modulation with minimal footprint and superior energy efficiency. Here, we demonstrate a monolithically integrated O-band Ge/SiGe QCSE modulator operating at 100 Gb s−1, seamlessly integrated with silicon nitride (SiN) waveguides on both silicon and silicon-on-insulator substrates. Our modulator achieves <1 dB coupling loss,  <63 fJ bit−1 energy consumption, and  >5 dB static extinction ratio, while maintaining performance across a 20–80 °C temperature range. Leveraging CMOS-compatible fabrication processes, we incorporate multiple quantum-well stacks grown at wafer scale on silicon, enabling large-scale production. The modulator’s substrate-agnostic integration with back-end of line grown SiN layers, presents a scalable approach for cost-effective co-integration of electronic and photonic components. This work advances high-speed, energy-efficient optical modulators and paves the way for next-generation photonic integrated circuits in data centre interconnects.