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<p>Magnetoresistance, the change of electrical resistance under a magnetic field, is one of the most versatile tools for probing charge, spin and orbital dynamics in solids. Since its discovery, magnetoresistance has provided unique insights into transport phenomena across classical, correlated and topological regimes, while&#xa0;also enabling technologies from magnetic sensors to data storage. This Primer introduces the physical principles that are fundamental to magnetoresistance and discusses some of the most important theoretical models that have been developed to account for them, ranging from Drude and Boltzmann transport to quantum linear response. Experimental methodologies to measure magnetoresistance in thin films and bulk materials are discussed, including device preparation, electrode design, measurement geometries and strategies to minimize artefacts such as current jetting, Hall mixing and parasitic capacitance. Finally, we discuss future opportunities in which magnetoresistance intersects with nanoscale fabrication, low dimensional materials and nonlinear transport, establishing it as a platform for both fundamental discoveries and emerging applications in quantum and functional devices.</p>

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Magnetoresistance phenomena and measurement methodologies

  • 期刊论文

  • 发表日期：

    2026年4月2日

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  • Changjiang Yi,
  • Edouard Lesne,
  • Stuart S. P. Parkin,
  • Claudia Felser

摘要

Magnetoresistance, the change of electrical resistance under a magnetic field, is one of the most versatile tools for probing charge, spin and orbital dynamics in solids. Since its discovery, magnetoresistance has provided unique insights into transport phenomena across classical, correlated and topological regimes, while also enabling technologies from magnetic sensors to data storage. This Primer introduces the physical principles that are fundamental to magnetoresistance and discusses some of the most important theoretical models that have been developed to account for them, ranging from Drude and Boltzmann transport to quantum linear response. Experimental methodologies to measure magnetoresistance in thin films and bulk materials are discussed, including device preparation, electrode design, measurement geometries and strategies to minimize artefacts such as current jetting, Hall mixing and parasitic capacitance. Finally, we discuss future opportunities in which magnetoresistance intersects with nanoscale fabrication, low dimensional materials and nonlinear transport, establishing it as a platform for both fundamental discoveries and emerging applications in quantum and functional devices.