Scholarlink

<p>Dynamic reconfiguration of charge carriers in confined ion channels under electrical stimulation produces memory effects, where the internal resistance depends on the history of the electric field. Vermiculite nanofluidic devices harness this effect to store and process information within a single component. We report switching between distinct memory loops by tuning ion transport pathways, governed by asymmetrical device architecture and intrinsic surface charge. Polarity-dependent memory switching between crossing-1 and crossing-2 loops is achieved solely by altering electrode configurations, without modifying electrolyte, channel surface chemistry or device structure, providing mechanistic insights into ionic memristors through a straightforward, experimental strategy. The memristive characteristics are demonstrated in both <i>in-plane</i> and <i>out-of-plane</i> channel configurations with channel lengths spanning from centimetres to micrometres using re-stacked vermiculite membranes and further investigated for miniaturization with devices of nanometre-scale channel lengths, fabricated via the ultramicrotomy method. Furthermore, we demonstrate neuromorphic functionalities, including synaptic potentiation-depression and programmable memory retention, highlighting potential for bio-inspired computing systems. Cost-effective and scalable fabrication of solution-processed vermiculite membrane memristors is attractive for sustainable integration of nanofluidic memristors for neuromorphic computing applications.</p><p></p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Two-dimensional clay channels for tunable nanofluidic memristor

  • 期刊论文

  • 出版模式：

    开放获取

  • 发表日期：

    2026年7月31日

查看全文
  • Sangeeta Yadav,
  • Raj Kumar Gogoi,
  • Aziz Lokhandwala,
  • Siddhi Vinayak Pandey,
  • Ankit Bhardwaj,
  • Sunando DasGupta,
  • Boya Radha

摘要

Dynamic reconfiguration of charge carriers in confined ion channels under electrical stimulation produces memory effects, where the internal resistance depends on the history of the electric field. Vermiculite nanofluidic devices harness this effect to store and process information within a single component. We report switching between distinct memory loops by tuning ion transport pathways, governed by asymmetrical device architecture and intrinsic surface charge. Polarity-dependent memory switching between crossing-1 and crossing-2 loops is achieved solely by altering electrode configurations, without modifying electrolyte, channel surface chemistry or device structure, providing mechanistic insights into ionic memristors through a straightforward, experimental strategy. The memristive characteristics are demonstrated in both in-plane and out-of-plane channel configurations with channel lengths spanning from centimetres to micrometres using re-stacked vermiculite membranes and further investigated for miniaturization with devices of nanometre-scale channel lengths, fabricated via the ultramicrotomy method. Furthermore, we demonstrate neuromorphic functionalities, including synaptic potentiation-depression and programmable memory retention, highlighting potential for bio-inspired computing systems. Cost-effective and scalable fabrication of solution-processed vermiculite membrane memristors is attractive for sustainable integration of nanofluidic memristors for neuromorphic computing applications.