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<p>Deep trench isolation (DTI) is indispensable for suppressing crosstalk and enabling high fill factors in dense silicon photomultipliers (SiPMs). However, plasma-induced sidewall defects create interface states that elevate dark count rate (DCR) and afterpulsing (AP) through generation-recombination and trap-assisted emission. Here, we establish and experimentally validate a quantitative carrier-emission model for DTI sidewall interfaces in SiPMs, linking the emission probability of interface-trapped carriers to the local doping concentration and minority-carrier diffusion length. Conformal POCl<sub>3</sub> doping raises the local Fermi level and fills low-energy interface states, suppressing thermionic hole emission while reducing peripheral field crowding. The optimized devices achieve a ~ 67% reduction in primary DCR and a ~ 42% reduction in AP probability, alongside an activation-energy shift from 0.04 eV to 0.49 eV, evidencing a transition from shallow trap-assisted generation to thermally activated emission. Qualitative infrared-pumped electron counting confirms doping-dependent interface-state filling. This trap-filling strategy decouples dark-noise suppression from photon-detection efficiency, offering a scalable pathway to low-noise, high-density SiPMs for applications requiring high sensitivity and precise timing.</p>

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Noise reduction in high-density silicon photomultipliers via passive POCl3 doping on trench

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2026年8月3日

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  • Shifeng Zhang,
  • Yanling Ren,
  • Ming Zhang,
  • Xianzheng Lang,
  • Jiacheng Lai,
  • Jiangteng Xia,
  • Hong Song,
  • Xiansong Ren,
  • Bo Wang,
  • Qiqi Shen,
  • Ruijie Li,
  • Anqi Hu,
  • Xia Guo

摘要

Deep trench isolation (DTI) is indispensable for suppressing crosstalk and enabling high fill factors in dense silicon photomultipliers (SiPMs). However, plasma-induced sidewall defects create interface states that elevate dark count rate (DCR) and afterpulsing (AP) through generation-recombination and trap-assisted emission. Here, we establish and experimentally validate a quantitative carrier-emission model for DTI sidewall interfaces in SiPMs, linking the emission probability of interface-trapped carriers to the local doping concentration and minority-carrier diffusion length. Conformal POCl3 doping raises the local Fermi level and fills low-energy interface states, suppressing thermionic hole emission while reducing peripheral field crowding. The optimized devices achieve a ~ 67% reduction in primary DCR and a ~ 42% reduction in AP probability, alongside an activation-energy shift from 0.04 eV to 0.49 eV, evidencing a transition from shallow trap-assisted generation to thermally activated emission. Qualitative infrared-pumped electron counting confirms doping-dependent interface-state filling. This trap-filling strategy decouples dark-noise suppression from photon-detection efficiency, offering a scalable pathway to low-noise, high-density SiPMs for applications requiring high sensitivity and precise timing.