<p>Emerging high-frequency electronics require polymer dielectrics that combine a low dielectric constant (<i>D</i><sub>k</sub>) with an ultra-low dissipation factor (<i>D</i><sub>f</sub>) under realistic humidity. Here, we report semi-aromatic polyimides (PIs) incorporating cyclohexyl-substituted double-decker-shaped silsesquioxane (C-DDSQ) units that simultaneously suppress electronic and dipolar polarizations while limiting water uptake. The best formulation shows <i>D</i><sub>k</sub> = 2.57 and <i>D</i><sub>f</sub> = 0.0019 at 10 GHz under 30% RH, and maintains minimal changes up to 60% RH (<i>ΔD</i><sub>k</sub> ≈ 0.02, <i>ΔD</i><sub>f</sub> ≈ 0.0003). Wide-angle X-ray diffraction confirms the retention of the cage-like silsesquioxane motif, and thermogravimetric analysis shows <i>T</i><sub>d-10</sub> ≥ 470 °C, indicating robust thermal endurance. Correlating <i>D</i><sub>k</sub> with in-plane refractive index (<i>n</i><sub>TE</sub>) reveals that the lowered <i>n</i> and the rigid, hydrophobic architecture of C-DDSQ account for the low losses at 10–20 GHz. These results position C-DDSQ-incorporating semi-aromatic PIs as promising interlayer dielectrics that deliver ultra-low loss, humidity stability, and high thermal tolerance without resorting to porosity or heavy fluorination.</p>

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Humidity-robust semi-aromatic polyimides with cyclohexyl-substituted double-decker-shaped silsesquioxane exhibiting low dielectric losses at 10-20 GHz

  • Natsuko Sashi,
  • Erina Yoshida,
  • Hayato Maeda,
  • Riku Takahashi,
  • Kan Hatakeyama-Sato,
  • Yuta Nabae,
  • Masatoshi Tokita,
  • Ririka Sawada,
  • Shinji Ando,
  • Teruaki Hayakawa

摘要

Emerging high-frequency electronics require polymer dielectrics that combine a low dielectric constant (Dk) with an ultra-low dissipation factor (Df) under realistic humidity. Here, we report semi-aromatic polyimides (PIs) incorporating cyclohexyl-substituted double-decker-shaped silsesquioxane (C-DDSQ) units that simultaneously suppress electronic and dipolar polarizations while limiting water uptake. The best formulation shows Dk = 2.57 and Df = 0.0019 at 10 GHz under 30% RH, and maintains minimal changes up to 60% RH (ΔDk ≈ 0.02, ΔDf ≈ 0.0003). Wide-angle X-ray diffraction confirms the retention of the cage-like silsesquioxane motif, and thermogravimetric analysis shows Td-10 ≥ 470 °C, indicating robust thermal endurance. Correlating Dk with in-plane refractive index (nTE) reveals that the lowered n and the rigid, hydrophobic architecture of C-DDSQ account for the low losses at 10–20 GHz. These results position C-DDSQ-incorporating semi-aromatic PIs as promising interlayer dielectrics that deliver ultra-low loss, humidity stability, and high thermal tolerance without resorting to porosity or heavy fluorination.