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<p>Controlling quantum states in low-dimensional systems is a cornerstone of modern condensed matter physics, with far-reaching implications for quantum information technologies. Among these, two-dimensional materials under strong magnetic fields provide a rich arena for realizing exotic transport phenomena in confined geometries. We report the observation of half-quantized conductance plateaus at unconventional filling factors, including <i>ν</i>&#xa0;=&#xa0;5/2, of non-topological origin, realized by a quantum point contact in monolayer graphene. The observed plateaus arise due to two distinct mechanisms: conventional charge equilibration between fractional quantum Hall edge states with different filling factors, and more unexpectedly, a novel process involving charge equilibration between fractional quantum Hall edge states and metallic reservoirs mediated by graphene’s zeroth Landau level. This work deepens the understanding of fractional quantum Hall states near metallic phases, challenging the circumstances under which quantized half-integer conductance can arise due to non-topological phenomena and offering new insights into the engineering of quantum devices.</p>

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Half-quantized Hall plateaus in the confined geometry of graphene

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2026年6月2日

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  • Preeti Pandey,
  • Sourav Manna,
  • Kristiana N. Frei,
  • Jerin Saji,
  • Anne Denis,
  • Alexander Savin,
  • Kenji Watanabe,
  • Takashi Taniguchi,
  • Pertti J. Hakonen,
  • Ankur Das,
  • Manohar Kumar

摘要

Controlling quantum states in low-dimensional systems is a cornerstone of modern condensed matter physics, with far-reaching implications for quantum information technologies. Among these, two-dimensional materials under strong magnetic fields provide a rich arena for realizing exotic transport phenomena in confined geometries. We report the observation of half-quantized conductance plateaus at unconventional filling factors, including ν = 5/2, of non-topological origin, realized by a quantum point contact in monolayer graphene. The observed plateaus arise due to two distinct mechanisms: conventional charge equilibration between fractional quantum Hall edge states with different filling factors, and more unexpectedly, a novel process involving charge equilibration between fractional quantum Hall edge states and metallic reservoirs mediated by graphene’s zeroth Landau level. This work deepens the understanding of fractional quantum Hall states near metallic phases, challenging the circumstances under which quantized half-integer conductance can arise due to non-topological phenomena and offering new insights into the engineering of quantum devices.