<p>With the rapid development of extended reality such as augmented reality/virtual reality displays, the demand for high-mobility and low-temperature-processable thin-film transistors (TFTs) has grown significantly. Oxide semiconductors are promising candidates due to their excellent electrical and optical properties. Among them, zinc tin oxide (ZTO), an indium-free oxide semiconductor, offers advantages in material abundance and electrical performance. In this study, we demonstrate a low-temperature metal-induced crystallization (MIC) approach using aluminum (Al) capped ZTO films and investigate the role of hydrogen-assisted annealing in enhancing carrier mobility. The resulting ZTO TFTs achieved a field-effect mobility of 57.5 cm²V^-1s^-1 after thermal annealing and 107.3 cm²V^-1s^-1 with additional hydrogen annealing, both without a significant threshold voltage shift. Increasing the Al capping length promotes more extensive front-channel crystallization and enhances carrier mobility. TCAD simulations confirmed the formation of an additional high mobility current path in the crystallized front-channel region. These findings highlight the potential of combining MIC and hydrogen annealing for high-performance, thermally compatible oxide electronics.</p>