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<p>One main limiting factor towards achieving high coherence times in superconducting circuits is two-level system (TLS) losses. Mitigating such losses requires controlling the formation of native oxides at the metal-air interface. Here, we report the growth of alkyl-phosphonate self-assembled monolayers (SAMs) on Nb thin films following oxide removal. The impact of passivation was evaluated via the performance of coplanar waveguide resonators at 10 mK, in terms of quality factor and resonant frequency, over six days of air exposure. Un-passivated resonators exhibited an ~80% increase in loss at single-photon power levels, whereas SAM-passivated resonators maintained excellent temporal stability, attributed to suppressed oxide regrowth. By employing a two-component TLS model, we discern distinct prominent loss channels for each resonator type and quantified the characteristic TLS loss of the SAMs to be ~5×10<sup>-7</sup>. We anticipate our passivation methodology to offer a promising route toward industrial-scale qubit fabrication, particularly where long-term device stability is critical.</p>

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High temporal stability of niobium superconducting resonators by surface passivation with organophosphonate self-assembled monolayers

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2026年1月12日

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  • Harsh Gupta,
  • Rui Pereira,
  • Leon Koch,
  • Niklas Bruckmoser,
  • Moritz Singer,
  • Benedikt Schoof,
  • Manuel Kompatscher,
  • Stefan Filipp,
  • Marc Tornow

摘要

One main limiting factor towards achieving high coherence times in superconducting circuits is two-level system (TLS) losses. Mitigating such losses requires controlling the formation of native oxides at the metal-air interface. Here, we report the growth of alkyl-phosphonate self-assembled monolayers (SAMs) on Nb thin films following oxide removal. The impact of passivation was evaluated via the performance of coplanar waveguide resonators at 10 mK, in terms of quality factor and resonant frequency, over six days of air exposure. Un-passivated resonators exhibited an ~80% increase in loss at single-photon power levels, whereas SAM-passivated resonators maintained excellent temporal stability, attributed to suppressed oxide regrowth. By employing a two-component TLS model, we discern distinct prominent loss channels for each resonator type and quantified the characteristic TLS loss of the SAMs to be ~5×10-7. We anticipate our passivation methodology to offer a promising route toward industrial-scale qubit fabrication, particularly where long-term device stability is critical.