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<p>ZrO<sub>2</sub>-based antiferroelectric (AFE) materials exhibit superior endurance compared to HfO<sub>2</sub>-based ferroelectrics, making them promise for nanoelectronics. Nonetheless, their endurance properties remain insufficient for dynamic random-access memory applications. In this respect, the fundamental physical mechanisms underlying polarization fatigue and the intrinsic constraints on self-recovery remain poorly understood, yet they are pivotal for achieving fatigue-free operation. Here, we systematically decouple the multiple fatigue mechanisms in ZrO<sub>2</sub>-based AFE capacitors and introduce a static self-recovery (SSR) method that significantly improves endurance. We present a three level traps model, developed by electrical measurements and first-principles calculations, that successfully describes the shallow/deep fatigue of ZrO<sub>2</sub>-based AFE materials and their SSR processes. Moreover, the SSR effect can be significantly enhanced by optimizing the combination of break time and cycling unit. The proposed SSR methodology offers a viable solution to the endurance challenges of AFE random-access memory in practical applications, paving the way for high-endurance, energy-efficient memory technologies with enhanced functional versatility.</p>

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Elucidating and decoupling diverse fatigue mechanisms toward static self-recovery in ZrO2-based antiferroelectrics

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2025年11月20日

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  • Haoji Qian,
  • Rongzong Shen,
  • Jiacheng Xu,
  • Miaomiao Zhang,
  • Minglei Ma,
  • Yian Ding,
  • Xiaoxi Li,
  • Gaobo Lin,
  • Jiani Gu,
  • Ran Cheng,
  • Yan Liu,
  • Chengji Jin,
  • Jiajia Chen,
  • Yue Hao,
  • Genquan Han

摘要

ZrO2-based antiferroelectric (AFE) materials exhibit superior endurance compared to HfO2-based ferroelectrics, making them promise for nanoelectronics. Nonetheless, their endurance properties remain insufficient for dynamic random-access memory applications. In this respect, the fundamental physical mechanisms underlying polarization fatigue and the intrinsic constraints on self-recovery remain poorly understood, yet they are pivotal for achieving fatigue-free operation. Here, we systematically decouple the multiple fatigue mechanisms in ZrO2-based AFE capacitors and introduce a static self-recovery (SSR) method that significantly improves endurance. We present a three level traps model, developed by electrical measurements and first-principles calculations, that successfully describes the shallow/deep fatigue of ZrO2-based AFE materials and their SSR processes. Moreover, the SSR effect can be significantly enhanced by optimizing the combination of break time and cycling unit. The proposed SSR methodology offers a viable solution to the endurance challenges of AFE random-access memory in practical applications, paving the way for high-endurance, energy-efficient memory technologies with enhanced functional versatility.