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<p>Ultra-pure materials are highly valued as model systems for the study of intrinsic physics. Frequently, however, the crystal growth of such pristine samples requires significant optimization. PtSn<sub>4</sub> is a rare example of a material that naturally forms with a very low concentration of crystalline defects. Here, we investigate the origin of its low defect levels using a combination of electrical resistivity measurements, computational modeling, and scanning tunneling microscopy imaging. While typical flux-grown crystals of PtSn<sub>4</sub> can have residual resistivity ratios (RRRs) that exceed 1000, we show that even at the most extreme formation speeds, the RRR cannot be suppressed below 100. This aversion to defect formation extends to both the Pt and Sn sublattices, which contribute with equal weight to the conduction properties. Direct local imaging with scanning tunneling microscopy further substantiates the rarity of point defects, while the prohibitive energetic cost of forming a defect is demonstrated through density functional theory calculations. Taken together, our results establish PtSn<sub>4</sub> as an intrinsically defect-intolerant material, making it an ideal platform to study other properties of interest, including extreme magnetoresistance and topology.</p>

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Intrinsic defect intolerance in the ultra-pure metal PtSn4

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2025年11月11日

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  • Samikshya Sahu,
  • Dong Chen,
  • Niclas Heinsdorf,
  • Ashley N. Warner,
  • Markus Altthaler,
  • Ashutosh K. Singh,
  • Douglas A. Bonn,
  • Sarah A. Burke,
  • Alannah M. Hallas

摘要

Ultra-pure materials are highly valued as model systems for the study of intrinsic physics. Frequently, however, the crystal growth of such pristine samples requires significant optimization. PtSn4 is a rare example of a material that naturally forms with a very low concentration of crystalline defects. Here, we investigate the origin of its low defect levels using a combination of electrical resistivity measurements, computational modeling, and scanning tunneling microscopy imaging. While typical flux-grown crystals of PtSn4 can have residual resistivity ratios (RRRs) that exceed 1000, we show that even at the most extreme formation speeds, the RRR cannot be suppressed below 100. This aversion to defect formation extends to both the Pt and Sn sublattices, which contribute with equal weight to the conduction properties. Direct local imaging with scanning tunneling microscopy further substantiates the rarity of point defects, while the prohibitive energetic cost of forming a defect is demonstrated through density functional theory calculations. Taken together, our results establish PtSn4 as an intrinsically defect-intolerant material, making it an ideal platform to study other properties of interest, including extreme magnetoresistance and topology.