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<p>Merging III-N-technology and wurtzite ferroelectricity could enable novel devices with enhanced functionality, for instance, harsh environment ferroelectric non-volatile memories and neuromorphic components. However, no scalable fabrication approach to achieve this fusion is available to date, as wurtzite ferroelectrics such as Al<sub>1-x</sub>Sc<sub>x</sub>N are hard to synthesize by metal organic chemical vapor deposition (MOCVD), the standard growth method for commercial III-N-devices. Sputtering as another high-throughput method does so far not reach the material quality that is necessary for III-N-technology. In this contribution, exceptional structural quality of Al<sub>1-x</sub>Sc<sub>x</sub>N grown by sputter epitaxy onto GaN is demonstrated, featuring an out-of-plane mosaicity of just 258 arcsec - comparable to state of the art MOCVD and molecular beam epitaxy (MBE) processes. Furthermore, ferroelectric switching is observed in typically non-ferroelectric binary AlN grown by both sputtering and MOCVD onto GaN. Thus, two promising approaches to realize ferroelectric III-N heterostructures with high-throughput methods exist: lattice-matched sputtering of Al<sub>1-x</sub>Sc<sub>x</sub>N on GaN and MOCVD-growth of binary AlN on GaN.</p>

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Toward ferroelectric AlN/GaN heterostructures and sputtered III-N thin films with metal organic chemical vapor deposition-like texture

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2025年10月1日

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  • Georg Schönweger,
  • Niklas Wolff,
  • Md Redwanul Islam,
  • Isabel Streicher,
  • Stefano Leone,
  • Lorenz Kienle,
  • Simon Fichtner

摘要

Merging III-N-technology and wurtzite ferroelectricity could enable novel devices with enhanced functionality, for instance, harsh environment ferroelectric non-volatile memories and neuromorphic components. However, no scalable fabrication approach to achieve this fusion is available to date, as wurtzite ferroelectrics such as Al1-xScxN are hard to synthesize by metal organic chemical vapor deposition (MOCVD), the standard growth method for commercial III-N-devices. Sputtering as another high-throughput method does so far not reach the material quality that is necessary for III-N-technology. In this contribution, exceptional structural quality of Al1-xScxN grown by sputter epitaxy onto GaN is demonstrated, featuring an out-of-plane mosaicity of just 258 arcsec - comparable to state of the art MOCVD and molecular beam epitaxy (MBE) processes. Furthermore, ferroelectric switching is observed in typically non-ferroelectric binary AlN grown by both sputtering and MOCVD onto GaN. Thus, two promising approaches to realize ferroelectric III-N heterostructures with high-throughput methods exist: lattice-matched sputtering of Al1-xScxN on GaN and MOCVD-growth of binary AlN on GaN.