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<p>Antiferromagnetic Weyl semimetals based on Mn<sub>3</sub>X(X = Ge, Sn, Ga) kagome compounds exhibit the same ferromagnetic-like responses, including anomalous Hall, Nernst, and magneto-optical effects, as recently discussed for altermagnets. Driven by the Berry curvature due to Weyl fermions, these materials show a disproportionately large magnitude of electromagnetic effects even in the absence of large magnetization. For applications it is crucial to realize these responses in a wide range of temperatures both below and above 300 K. While stoichiometric Mn<sub>3</sub>X materials do not offer optimal performance, we show that Mn<sub>3</sub>Sn<sub>1−<i>x</i></sub>Ga<sub><i>x</i></sub> sputtered films with a variable composition offers a tunable Néel temperature, T<sub>N</sub>&#xa0;≈&#xa0;425 ± 6–500 ± 15 K, which is crucial for device applications, together with a large tunable anomalous Hall effect. Our thin film growth method enables continuous and precise control over the film composition between <i>x</i> = 0 and <i>x</i> = 1. Through a detailed magnetization and Hall transport, we establish the magnetic phase diagram for the hexagonal Mn<sub>3</sub>Sn<sub>1−<i>x</i></sub>Ga<sub><i>x</i></sub>. Our results reveal an enhanced T<sub>N</sub> and antichiral magnetic phase in Ga-doped Mn<sub>3</sub>Sn and an enhanced anomalous Hall magnitude in Sn-doped Mn<sub>3</sub>Ga compared to their stoichiometric undoped forms. Our work demonstrates a route to optimize the technologically relevant antiferromagnets for various applications.</p><p></p>

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Tunable high Néel temperature and large anomalous Hall response in antiferromagnetic Weyl semimetal Mn3Sn1−xGax thin films

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2025年9月24日

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  • M. Raju,
  • Takumi Matsuo,
  • Mikias B. Balkew,
  • Daisuke Nishio-Hamane,
  • Tomoya Higo,
  • Collin Broholm,
  • Satoru Nakatsuji

摘要

Antiferromagnetic Weyl semimetals based on Mn3X(X = Ge, Sn, Ga) kagome compounds exhibit the same ferromagnetic-like responses, including anomalous Hall, Nernst, and magneto-optical effects, as recently discussed for altermagnets. Driven by the Berry curvature due to Weyl fermions, these materials show a disproportionately large magnitude of electromagnetic effects even in the absence of large magnetization. For applications it is crucial to realize these responses in a wide range of temperatures both below and above 300 K. While stoichiometric Mn3X materials do not offer optimal performance, we show that Mn3Sn1−xGax sputtered films with a variable composition offers a tunable Néel temperature, TN ≈ 425 ± 6–500 ± 15 K, which is crucial for device applications, together with a large tunable anomalous Hall effect. Our thin film growth method enables continuous and precise control over the film composition between x = 0 and x = 1. Through a detailed magnetization and Hall transport, we establish the magnetic phase diagram for the hexagonal Mn3Sn1−xGax. Our results reveal an enhanced TN and antichiral magnetic phase in Ga-doped Mn3Sn and an enhanced anomalous Hall magnitude in Sn-doped Mn3Ga compared to their stoichiometric undoped forms. Our work demonstrates a route to optimize the technologically relevant antiferromagnets for various applications.