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<p>Emerging non-volatile memristor-based devices with resistive switching (RS) materials are being widely researched as promising contenders for the next generation of data storage and neuromorphic technologies. Titanium nitride (TiN<sub>x</sub>) is a common industry-friendly electrode system for RS; however, the precise TiN<sub>x</sub> properties required for optimum RS performance is still lacking. Herein, using ion-assisted DC magnetron sputtering, we demonstrate the key importance not only of engineering the TiN<sub>x</sub> bottom electrodes to be dense, smooth, and conductive, but also understoichiometric in N. With these properties, RS in HfO<sub>2</sub>-based memristive devices is shown to be optimised for TiN<sub>0.96</sub>. These devices have switching voltages ≤&#xa0;±1 V with promising device-to-device uniformity, endurance, memory window of ~40, and multiple non-volatile intermediate conductance levels. This study highlights the importance of precise tuning of TiN<sub>x</sub> bottom electrodes to achieve robust performance of oxide resistive switching materials.</p><p></p>

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Enhanced non-volatile resistive switching performance through ion-assisted magnetron sputtering of TiN bottom electrodes

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2025年4月18日

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  • Babak Bakhit,
  • Markus Hellenbrand,
  • Benson Kunhung Tsai,
  • Abhijeet Choudhury,
  • Peter Polcik,
  • Szilard Kolozsvari,
  • Haiyan Wang,
  • Andrew J. Flewitt,
  • Judith L. MacManus-Driscoll

摘要

Emerging non-volatile memristor-based devices with resistive switching (RS) materials are being widely researched as promising contenders for the next generation of data storage and neuromorphic technologies. Titanium nitride (TiNx) is a common industry-friendly electrode system for RS; however, the precise TiNx properties required for optimum RS performance is still lacking. Herein, using ion-assisted DC magnetron sputtering, we demonstrate the key importance not only of engineering the TiNx bottom electrodes to be dense, smooth, and conductive, but also understoichiometric in N. With these properties, RS in HfO2-based memristive devices is shown to be optimised for TiN0.96. These devices have switching voltages ≤ ±1 V with promising device-to-device uniformity, endurance, memory window of ~40, and multiple non-volatile intermediate conductance levels. This study highlights the importance of precise tuning of TiNx bottom electrodes to achieve robust performance of oxide resistive switching materials.