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<p>Mid-wavelength infrared (MWIR) avalanche photodiodes (APD) are extensively employed in high-precision detection and thermal imaging in complex context. However, conventional MWIR APD’s detection typically requires low-temperature operation to relieve signal-to-noise limitations imposed by narrow bandgap materials. Here, to address this challenge, we present the high-temperature-operating MWIR avalanche photodiodes with a modified fully-depleted absorption, multiplication region (MFDAM) to suppress the high dark current. At 80 K, the proposed APD achieves comparable gain-normalized dark current density (GNDCD) still &lt;6&#xa0;×&#xa0;10<sup>−10</sup> A/cm<sup>2</sup> at gain &lt;20. At 160 K, the GNDCD preserves consistently below 2&#xa0;×&#xa0;10<sup>−6</sup> A/cm<sup>2</sup> for gain values less than 189, while the excess noise holds below 1.4 and the noise equivalent power is &lt;7.2&#xa0;×&#xa0;10<sup>−16</sup> W/Hz<sup>1/2</sup> of 3.5 <i>μ</i>m. The device is also validated for imaging targets up to 200 km away at a gain of &lt;10. These results enable the MFDAM APDs to be promising and desirable for future high-temperature-operating MWIR detection applications.</p>

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High-temperature mid-wavelength infrared avalanche photodiode with modified fully-depleted absorption and multiplication region

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2025年4月12日

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  • Liqi Zhu,
  • Zihao Wang,
  • Jiamu Lin,
  • Jian Huang,
  • Linxuan He,
  • Xi Wang,
  • Songmin Zhou,
  • Zhikai Gan,
  • Xun Li,
  • Qingxin Li,
  • Li He,
  • Changqing Lin,
  • Chun Lin,
  • Baile Chen

摘要

Mid-wavelength infrared (MWIR) avalanche photodiodes (APD) are extensively employed in high-precision detection and thermal imaging in complex context. However, conventional MWIR APD’s detection typically requires low-temperature operation to relieve signal-to-noise limitations imposed by narrow bandgap materials. Here, to address this challenge, we present the high-temperature-operating MWIR avalanche photodiodes with a modified fully-depleted absorption, multiplication region (MFDAM) to suppress the high dark current. At 80 K, the proposed APD achieves comparable gain-normalized dark current density (GNDCD) still <6 × 10−10 A/cm2 at gain <20. At 160 K, the GNDCD preserves consistently below 2 × 10−6 A/cm2 for gain values less than 189, while the excess noise holds below 1.4 and the noise equivalent power is <7.2 × 10−16 W/Hz1/2 of 3.5 μm. The device is also validated for imaging targets up to 200 km away at a gain of <10. These results enable the MFDAM APDs to be promising and desirable for future high-temperature-operating MWIR detection applications.